半导体学报2021年第1期目次

Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Guest Editors: Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li

J. Semicond. Volume 42, Number 1, January 2021

RESEARCH HIGHLIGHTS

Ion migration in perovskite solar cells

Xiaoxue Ren, Lixiu Zhang, Yongbo Yuan, Liming Ding

J. Semicond.  2021, 42(1): 010201

doi: 10.1088/1674-4926/42/1/010201

COMMENTS AND OPINIONS

Embracing the era of neuromorphic computing

Yanghao Wang, Yuchao Yang, Yue Hao, Ru Huang

J. Semicond.  2021, 42(1): 010301

doi: 10.1088/1674-4926/42/1/010301

A pioneer in magnetic semiconductors — Professor Stephan von Molnár

Jianhua Zhao, Yongqing Li, Peng Xiong

J. Semicond.  2021, 42(1): 010302

doi: 10.1088/1674-4926/42/1/010302

SHORT COMMUNICATION

A chlorinated copolymer donor demonstrates a 18.13% power conversion efficiency

Jianqiang Qin, Lixiu Zhang, Chuantian Zuo, Zuo Xiao, Yongbo Yuan, Shangfeng Yang, Feng Hao, Ming Cheng, Kuan Sun, Qinye Bao, Zhengyang Bin, Zhiwen Jin, Liming Ding

J. Semicond.  2021, 42(1): 010501

doi: 10.1088/1674-4926/42/1/010501

D18, an eximious solar polymer!

Ke Jin, Zuo Xiao, Liming Ding

J. Semicond.  2021, 42(1): 010502

doi: 10.1088/1674-4926/42/1/010502

EDITORIAL

Preface to the Special Issue on Beyond Moore: Resistive Switching Devices for Emerging Memory and Neuromorphic Computing

Yue Hao, Huaqiang Wu, Yuchao Yang, Qi Liu, Xiao Gong, Genquan Han, Ming Li

J. Semicond.  2021, 42(1): 010101

doi: 10.1088/1674-4926/42/1/010101

REVIEWS

Towards engineering in memristors for emerging memory and neuromorphic computing: A review

Andrey S. Sokolov, Haider Abbas, Yawar Abbas, Changhwan Choi

J. Semicond.  2021, 42(1): 013101

doi: 10.1088/1674-4926/42/1/013101

A revew of in situ transmission electron microscopy study on the switching mechanism and packaging reliability in non-volatile memory

Xin Yang, Chen Luo, Xiyue Tian, Fang Liang, Yin Xia, Xinqian Chen, Chaolun Wang, Steve Xin Liang, Xing Wu, Junhao Chu

J. Semicond.  2021, 42(1): 013102

doi: 10.1088/1674-4926/42/1/013102

Electrolyte-gated transistors for neuromorphic applications

Heyi Huang, Chen Ge, Zhuohui Liu, Hai Zhong, Erjia Guo, Meng He, Can Wang, Guozhen Yang, Kuijuan Jin

J. Semicond.  2021, 42(1): 013103

doi: 10.1088/1674-4926/42/1/013103

Multiply accumulate operations in memristor crossbar arrays for analog computing

Jia Chen, Jiancong Li, Yi Li, Xiangshui Miao

J. Semicond.  2021, 42(1): 013104

doi: 10.1088/1674-4926/42/1/013104

Neuromorphic vision sensors: Principle, progress and perspectives

Fuyou Liao, Feichi Zhou, Yang Chai

J. Semicond.  2021, 42(1): 013105

doi: 10.1088/1674-4926/42/1/013105

ARTICLES

Study of short-term synaptic plasticity in Ion-Gel gated graphene electric-double-layer synaptic transistors

Chenrong Gong, Lin Chen, Weihua Liu, Guohe Zhang

J. Semicond.  2021, 42(1): 014101

doi: 10.1088/1674-4926/42/1/014101

Voltage-dependent plasticity and image Boolean operations realized in a WO x-based memristive synapse

Jiajuan Shi, Ya Lin, Tao Zeng, Zhongqiang Wang, Xiaoning Zhao, Haiyang Xu, Yichun Liu

J. Semicond.  2021, 42(1): 014102

doi: 10.1088/1674-4926/42/1/014102

Neutron irradiation-induced effects on the reliability performance of electrochemical metallization memory devices

Ye Tao, Xuhong Li, Zhongqiang Wang, Gang Li, Haiyang Xu, Xiaoning Zhao, Ya Lin, Yichun Liu

J. Semicond.  2021, 42(1): 014103

doi: 10.1088/1674-4926/42/1/014103

目录推荐

半导体学报2020年第6期目次

半导体学报2020年第5期目次

《半导体学报》简介：

《半导体学报》是中国科学院主管、中国电子学会和中国科学院半导体研究所主办的学术刊物，1980年创刊，首任主编是王守武院士，黄昆先生撰写了创刊号首篇论文，2009年改为全英文刊Journal of Semiconductors（简称JOS），同年开始与IOPP英国物理学会出版社合作向全球发行。现任主编是中科院副院长、国科大校长李树深院士。2019年，JOS入选“中国科技期刊卓越行动计划”。2020年，JOS被EI收录。

“中国半导体十大研究进展”推荐与评选工作简介：

《半导体学报》在创刊四十年之际，启动实施 “中国半导体年度十大研究进展”的推荐和评选工作，记录我国半导体科学与技术研究领域的标志性成果。以我国科研院所、高校和企业等机构为第一署名单位，本年度公开发表的半导体领域研究成果均可参与评选。请推荐人或自荐人将研究成果的PDF文件发送至《半导体学报》电子邮箱：[e-mail]，并附简要推荐理由。被推荐人须提供500字左右工作简介，阐述研究成果的学术价值和应用前景。年度十大研究进展将由评审专家委员会从候选推荐成果中投票产生，并于下一年度春节前公布。

JOSarXiv预发布平台简介：

半导体科技发展迅猛，科技论文产出数量逐年增加。JOSarXiv致力于为国内外半导体领域科研人员提供中英文科技论文免费发布和获取的平台，保障优秀科研成果首发权的认定，促进更大范围的学术交流。JOSarXiv由《半导体学报》主编李树深院士倡导建立，编辑部负责运行和管理，是国内外第一个专属半导体科技领域的论文预发布平台，提供预印本论文存缴、检索、发布和交流共享服务。

JOSarXiv于2020年1月1日正式上线（http://arxiv.jos.ac.cn/），通过《半导体学报》官网（http://www.jos.ac.cn/）亦可访问。敬请关注和投稿！

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